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| SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * Low equivalent on-resistance; RCE(sat) 93m at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage APPLICATIONS * Battery powered circuits COMPLEMENTAY TYPE FZT688B PARTMARKING DETAIL FZT788B C FZT788B E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. VALUE -15 -15 -5 -8 -3 2 -55 to +150 MAX. UNIT V V V -0.1 -0.1 -0.15 -0.25 -0.45 -0.5 -0.9 -0.75 500 400 300 150 100 225 25 35 400 1500 A A UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C) SYMBOL MIN. -15 -15 -5 CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-10V VEB=-4V IC=-0.5A, IB=-2.5mA* IC=-1A, IB=-5mA* IC=-2A, IB=-10mA* IC=-3A, IB=-50mA* IC=-1A, IB=-5mA* IC=-1A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-6A, VCE=-2V* MHz pF pF ns ns IC=-50mA, VCE=-5V f=50MHz VEB=-0.5V, f=1MHz VCB=-10V, f=1MHz IC=-500mA, IB1=-50mA IB2=-50mA, VCC=-10V Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times V(BR)EBO ICBO IEBO VCE(sat) V V V V V VBE(sat) VBE(on) hFE fT Cibo Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 244 FZT788B TYPICAL CHARACTERISTICS 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 IC/IB=200 IC/IB=100 IC/IB=10 Tamb=25C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -55C +25C +100C +175C IC/IB=200 - (Volts) V V - (Volts) 0.01 0.1 1 I+ - Collector Current (Amps) 10 0.01 0.1 1 I+ - Collector Current (Amps) 10 VCE(sat) v IC VCE(sat) v IC 1.6 - Normalised Gain - Typical Gain - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 00 +100C +25C -55C VCE=2V 1200 900 600 300 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -55C +25C +100C +175C IC/IB=200 h 0.01 0.1 1 10 h V 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.6 1.4 -55C +25C +100C VCE=2V 10 - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 1 DC 1s 100ms 10ms 1ms 100s 0.1 V 0.01 0.1 1 10 100 I+ - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 245 |
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